Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and circuit topologies paced the growing need for electrical power in our daily lives. In the new millennium, however, the rate of improvement slowed as the silicon power MOSFET asymptotically approached its theoretical bounds.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Power, Power semiconductors, Semiconductors
More resources from Efficient Power Conversion Corporation (EPC)
eGaN® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the sim...
Gallium Nitride (GaN) Technology Overview
For over three decades, power management efficiency and cost showed steady improvement as innovations in power MOSFET structures, technology, and c...
eGaN® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN ...
