eGaNĀ® FET Electrical Characteristics
In this paper the basic electrical characteristics of eGaN FETs are explained and compared against silicon MOSFETs. A good understanding of the similarities and differences between these two technologies is a necessary foundation for understanding how much we can improve existing power conversion systems.
Every semiconductor has a limit to its capabilities. These limits are typically expressed prominently in a device data sheet and serve as a guide to designers as to how to create designs that do not have hidden quality or reliability issues.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Power
More resources from Efficient Power Conversion Corporation (EPC)
eGaNĀ® FETs in Wireless Power Transfer Systems
The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charg...
eGaNĀ® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that ...
eGaNĀ® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN ...