Impact of Parasitics on Performance
With improvements in switching figure of merit provided by eGaN FETs, the packaging and PCB layout parasitics are critical to high performance.
This white paper will study the effect of parasitic inductance on performance for eGaN FET and MOSFET based point of load (POL) buck converters operating at a switching frequency of 1 MHz, an input voltage of 12 V, an output voltage of 1.2 V, and an output current up to 20 A.
Download to find out more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Capacitors, Power
More resources from Efficient Power Conversion Corporation (EPC)
eGaN® FETs for Envelope Tracking
Gallium nitride transistors can be used to improve the efficiency of DC-DC conversion.
In this white paper we look at a new application that ...
Optimizing PCB Layout
This white paper will explore the optimization of PCB layout for an eGaN FET based point of load (POL) buck converter, comparing the conventional d...
Dead-Time Optimization for Maximum Efficiency
In this white paper EPC continues our exploration of optimization issues and look at the impact of dead-time on system efficiency for eGaN® FETs a...
