eGaN® FET Small Signal RF Performance
Even though the eGaN FET was designed and optimized as a power-switching device, it also exhibits good RF characteristics. The smallest 200 V eGaN FET, EPC2012, was selected for RF evaluation and should be viewed as a starting point from which the RF characteristics of future eGaN FET part numbers can be optimized for even better RF performance at higher frequencies.
This paper focuses on RF characterization in the frequency range from 200 MHz through 2.5 GHz.
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Related Categories: Connectors, cooling, Inductors, Power, Semiconductors
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