eGaN® FET Drivers and Layout Considerations
When considering gate drive requirements, the three most important parameters for eGaN FETs are (1) the maximum allowable gate voltage, (2) the gate threshold voltage, and (3) the “body diode” voltage drop.
eGaN FETs differ from their silicon counterparts because of their significantly faster switching speeds and consequently have different requirements for gate drive, layout, and thermal management which can all be interactive.
Download this whitepaper to learn more.
Read More
By submitting this form you agree to Efficient Power Conversion Corporation (EPC) contacting you with marketing-related emails or by telephone. You may unsubscribe at any time. Efficient Power Conversion Corporation (EPC) web sites and communications are subject to their Privacy Notice.
By requesting this resource you agree to our terms of use. All data is protected by our Privacy Notice. If you have any further questions please email dataprotection@techpublishhub.com
Related Categories: Capacitors, cooling, Power, Semiconductors
More resources from Efficient Power Conversion Corporation (EPC)
Improve DC-DC Flyback Converter Efficiency Using eGaN FETs
DC-DC converter designers can achieve low cost at low power densities by using flyback converters and enhancement mode gallium nitride transistors....
eGaN® FETs in Wireless Power Transfer Systems
The popularity of wireless energy transfer has increased over the last few years and in particular for applications targeting portable device charg...
eGaN® FETs and ICs for 48 V-12 V Regulated Brick Converters
Unregulated performance in a regulated design delivers unprecedented power density.
Low QOSS, zero QRR and low QGD, along with low inductance...
